Barrier formation using novel sputter deposition method with PVD, CVD, or ALD
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United States of America Patent
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May 25, 2004
Issued Date -
N/A
app pub date -
Jan 9, 2002
filing date -
Jul 25, 2001
priority date (Note) -
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Abstract
Methods and apparatus are provided for forming a metal or metal silicide barrier layer. In one aspect, a method is provided for processing a substrate including positioning a substrate having a silicon material disposed thereon in a substrate processing system, depositing a first metal layer on the substrate surface in a first processing chamber, forming a metal silicide layer by reacting the silicon material and the first metal layer, and depositing a second metal layer in situ on the substrate in a second processing chamber. In another aspect, the method is performed in an apparatus including a load lock chamber, the intermediate substrate transfer region including a first substrate transfer chamber and a second substrate transfer chamber, a physical vapor deposition processing chamber coupled to the first substrate transfer chamber, and a chemical vapor deposition chamber coupled to the second substrate transfer chamber.
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