MOSFET transistor with thick and thin pad oxide films
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United States of America Patent
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May 25, 2004
Grant Date -
Dec 12, 2002
app pub date -
Aug 21, 2002
filing date -
Aug 31, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A MOS transistor and a method for fabricating the MOS transistor which includes the forming a gate electrode containing an HLD film; etching the HLD film; etching a pad oxide film formed at a lower portion of the HLD film at a predetermined thickness; removing the nitride side wall spacer of an opening in the gate electrode; forming a LDD region by implanting impurity ions into the semiconductor substrate at both sides of the gate electrode; forming a side wall spacer at both sides of the gate electrode; and forming a source/drain by implanting impurity ions into the semiconductor substrate.
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