Method of making a metallization line layout
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 1, 2004
Grant Date -
Sep 5, 2002
app pub date -
Mar 25, 2002
filing date -
Aug 14, 1995
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention relates to metallization line layouts that minimize focus offset sensitivity by a substantial elimination of thin isolated metallization line segments that are inadequately patterned during formation of a mask. The present invention also relates to a metallization line layout that staggers unavoidable exposures. Embodiments of these metallization line layouts include enhanced terminal ends of isolated metallization lines, filled inter-metallization line spaces, and additional 'dummy' metal shapes in open areas. The present invention also relates to a method of forming a metallization layer such that a substantially deposited, planarized interlayer dielectric layer can be formed without etchback or chemical-mechanical polishing.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully