Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes
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United States of America Patent
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Jun 1, 2004
Grant Date -
Oct 2, 2003
app pub date -
Mar 24, 2003
filing date -
May 23, 2000
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Abstract
An Indium/Gallium/Arsenide (InGaAs) detector having avalanche photodiodes (APD's) and p-i-n photodiodes on a single chip is provided. A method of fabricating the InGaAs device is also provided. The bias on the APD and p-i-n photodiodes are separately controlled.
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