Dry clean process to improve device gate oxide integrity (GOI) and reliability
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 1, 2004
Grant Date -
N/A
app pub date -
May 7, 2002
filing date -
May 7, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for forming a gate silicide portion comprising the following steps. A substrate having a gate oxide layer formed is provided. A gate layer is formed over the gate oxide layer. An RPO layer is formed over the gate layer. A patterned photoresist layer is formed over the RPO layer exposing a portion of the RPO layer. The portion of the RPO layer having a patterned photoresist residue thereover. The structure is subjected to a dry plasma or gas treatment to clean the exposed portion of the RPO layer and removing the patterned photoresist residue. The RPO layer is etched using the patterned photoresist layer as a mask to expose a portion of the gate layer. The dry plasma or gas treatment preventing formation of defects or voids in the RPO layer and the poly gate layer during etching of the RPO layer. A metal layer is formed over at least the exposed portion of the gate layer. The structure is annealed to convert at least a portion of the metal layer and at least a portion of the underlying portion of the gate layer to form a gate silicide portion.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully