Structures and methods to enhance copper metallization
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United States of America Patent
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Jun 1, 2004
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app pub date -
Jul 16, 2002
filing date -
Jan 18, 2000
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Abstract
Disclosed structures and methods inhibit atomic migration and related capacitive-resistive effects between a metallization layer and an insulator layer in a semiconductor structure. One exemplary structure includes an inhibiting layer between an insulator and a metallization layer. The insulator includes a polymer or an insulating oxide compound. And, the inhibiting layer has a compound formed from a reaction between the polymer or insulating oxide compound and a transition metal, a representative metal, or a metalloid.
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