Active pixel sensor with intra-pixel charge transfer
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United States of America Patent
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Jun 1, 2004
Grant Date -
Aug 28, 2003
app pub date -
Mar 12, 2003
filing date -
Jan 28, 1994
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.
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