PHASE CHANGE MEMORY AND METHOD THEREFOR

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20040113136A1
SERIAL NO

10319753

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode, an adhesive material, an insulating material between the electrode and the adhesive material, wherein a portion of the adhesive material, a portion of the insulating material, and a portion of the electrode form a substantially planar surface. The phase change memory may further include a phase change material on the substantially planar surface and contacting the electrode, the adhesive material, and the insulating material.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dennison, Charles H San Jose, US 269 8651

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