US Patent No: 6,744,101
Number of patents in Portfolio can not be more than 2000
Non-uniform gate/dielectric field effect transistor
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Jun 1, 2004
Issued date -
Mar 15, 2001
filing date -
09/808,896
serial no -
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Abstract
A field effect transistor (FET) structure, and method for making the same, which further suppresses short-channel effects based on variations within the gate dielectric itself. The FET structure utilizes non-uniform gate dielectrics to alter the vertical electric field presented along the channel. The thickness and/or dielectric constant of the gate dielectric is varied along the length of the channel to present a vertical electric field which varies in a manner that tends to reduce the short-channel effects and gate capacitances.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 5,741,737 MOS transistor with ramped gate oxide thickness and method for making same | 30 | 1996 | |
| 5,897,354 Method of forming a non-volatile memory device with ramped tunnel dielectric layer | 40 | 1996 | |
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| 6,238,985 Semiconductor device and method for fabricating the same | 8 | 1999 | |
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| 5,314,834 Field effect transistor having a gate dielectric with variable thickness | 44 | 1991 | |
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| 5,338,954 Semiconductor memory device having an insulating film and a trap film joined in a channel region | 63 | 1993 | |
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| 6,110,783 Method for forming a notched gate oxide asymmetric MOS device | 44 | 1997 | |
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