Method of reducing the thickness of a silicon substrate
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United States of America Patent
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Jun 8, 2004
Grant Date -
Oct 23, 2003
app pub date -
Dec 13, 2002
filing date -
Dec 13, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of reducing the thickness of a silicon substrate made superficially porous in particular in certain areas on one side. A back of the silicon substrate facing a porous front is made porous over the entire area and the produced porous material is subsequently removed in such a way that the remaining thickness of the substrate, at least in the area where the porous material has been removed from the back, corresponds to a predetermined reduced thickness compared to the original thickness of the substrate. The proposed method is particularly suited for the manufacture of a thermally operating sensor on the basis of technology using porous silicon, of a temperature sensor, a mass flow sensor, an air quality sensor, or a gas sensor.
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