Method for making programmable resistance memory element

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 6750079
APP PUB NO 20020045323A1
SERIAL NO

09891157

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hudgens, Stephen J Santa Clara, CA 67 6997
Klersy, Patrick Lake Orion, MI 28 3717
Lowrey, Tyler San Jose, CA 149 5841
Maimon, Jon Manassas, VA 17 1346

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation