Method and apparatus for forming an interlayer insulating film and semiconductor device
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United States of America Patent
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Jun 15, 2004
Grant Date -
N/A
app pub date -
Mar 6, 2000
filing date -
Mar 26, 1999
priority date (Note) -
Expired
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Abstract
A method for forming an interlayer insulating film includes the steps of forming an underlying insulating film on a substrate; forming a film containing B (boron), C (carbon) and H.sub.2 O) on the underlying insulating film by plasma enhanced chemical vapor deposition using a source gas containing an Si--C--O--H compound, an oxidative gas and a compound containing B (boron); releasing C (carbon) and H.sub.2 O in the film from the film by annealing the film, and thereby forming a porous SiO.sub.2 film containing B (boron); and subjecting to the porous SiO.sub.2 film containing B (boron) to H (hydrogen) plasma treatment, and then forming a cover insulating film.
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