Process for producing macroscopic cavities beneath the surface of a silicon wafer
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United States of America Patent
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Jun 15, 2004
Grant Date -
Jul 4, 2002
app pub date -
Oct 24, 2001
filing date -
Oct 24, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A silicon element having macrocavities beneath its exterior surface is fabricated by electrochemical etching of a p-type silicon wafer. Etching at a high current density results in the formation of deep macrocavities overhung by a layer of crystalline silicon. The process works with both aqueous and non-aqueous electrolytes.
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