Integration scheme for dual damascene structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 22, 2004
Grant Date -
N/A
app pub date -
Nov 3, 2000
filing date -
Nov 3, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method and apparatus for processing a substrate to form a feature in low k dielectric materials. One aspect of the invention provides a method for processing a substrate including forming a feature definition in a dielectric material deposited on a surface of a substrate, depositing one or more conductive materials to fill at least a portion of the feature definition, planarizing the substrate surface to expose the dielectric material, removing at least a portion of the dielectric material, and depositing a low k dielectric material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully