Importance

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Abstract

A semiconductor device with a substrate having an insulating surface, a first signal line extending over the substrate, a first thin film transistor having a channel region with crystalline silicon formed over the substrate and a gate of the first thin film transistor is connected to the first signal line, a second signal line extending across the first signal line, a second thin film transistor having a channel region comprising crystalline silicon formed over the substrate and a signal applied to a gate of the second thin film transistor from the second signal line through at least the first thin film transistor, a voltage supply line formed over the substrate, a pixel electrode formed over the substrate and the pixel electrode is supplied with a voltage from the voltage supply line through at least the second thin film transistor, and a driving circuit formed over the substrate for driving at least one of the first and second thin film transistors, the driving circuit having a third thin film transistor wherein a channel forming region of the third thin film transistor comprises crystalline silicon.

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First Claim