Atmospheric pressure wafer processing reactor having an internal pressure control system and method
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United States of America Patent
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Jul 13, 2004
Grant Date -
May 22, 2003
app pub date -
Aug 23, 2002
filing date -
Aug 24, 2001
priority date (Note) -
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Abstract
An atmospheric pressure wafer processing system for delivering at least one gas is provided, having an exhaust control feedback system that utilizes sensors to measure the pressure within the system and adjusts control units to maintain the desired set pressures within the system. In particular the sensors measure the small differential pressures inside a muffle, and specifically the load, bypass center and unload sections of the muffle, relative to the chase ambient pressure. Controlling the muffle pressures directly within the atmospheric system yields a more stable pressure balance for processing wafers less subject to changes in the external environment and allows for compensation of varying input gas flows as occurs when the supply pressure to the system may vary. This system and method of pressure control is particularly advantageous for chemical vapor deposition application yielding improved process repeatability over an extended period of runtime.
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