Apparatus and method for growth of a thin film
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United States of America Patent
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Jul 20, 2004
Grant Date -
May 15, 2003
app pub date -
Dec 10, 2002
filing date -
Sep 8, 1999
priority date (Note) -
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Abstract
An improved apparatus and method for substrate layer deposition in which substrate layers are grown by carrier gas delivery of sequential pulses of reactants to the substrate surface. At least one of the reactants comprises excited species, e.g., radicals. In a specific embodiment, the apparatus of this invention provides sequential repeated pulses of reactants in a flow of carrier gas for reaction at a substrate surface. The reactant pulses are delivered with sufficient intervening delay times to minimize undesirable reaction between reactants in adjacent pulses in the gas phase or undesired uncontrolled reactions on the substrate surface.
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