Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
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United States of America Patent
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Jul 20, 2004
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N/A
app pub date -
Nov 21, 2002
filing date -
Apr 18, 2002
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Abstract
Disclosed formulations of supercritical solutions are useful in wafer cleaning processes. Supercritical solutions of the invention may be categorized by their chemistry, for example, basic, acidic, oxidative, and fluoride chemistries are used. Such solutions may include supercritical carbon dioxide and at least one reagent dissolved therein to facilitate removal of waste material from wafers, particularly for removing photoresist and post-etch residues from low-k materials. This reagent may include an ammonium carbonate or bicarbonate, and combinations of such reagents. The solution may include one or more co-solvents, chelating agents, surfactants, and anti-corrosion agents as well.
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