Method of making programmable resistance memory element
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United States of America Patent
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Jul 20, 2004
Grant Date -
Feb 26, 2004
app pub date -
Aug 26, 2003
filing date -
Oct 1, 1997
priority date (Note) -
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Abstract
A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
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