Fabrication method for forming flash memory device provided with adjustable sharp end structure of the L-shaped floating gate
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United States of America Patent
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Jul 27, 2004
Grant Date -
N/A
app pub date -
Mar 18, 2003
filing date -
Mar 18, 2003
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention generally relates to provide a fabrication method for forming a flash memory device provided with an adjustable sharp end structure of the floating gate. While the present invention utilizes the dielectric spacer to form the L-shaped floating gate provided with a sharp end structure, the present invention adjust the thickness of the polysilicon layer and the dielectric layer covering on the polysilicon layer surface to adjust the position of the dielectric spacer so as to change the position of the sharp end structure of the L-shaped floating gate and to enhance the ability of erasing control of the flash memory and to simultaneously form a stable and easily controlled channel length and the sharp end structure for point discharging.
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