Method of N2O growth of an oxide layer on a silicon carbide layer
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United States of America Patent
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Jul 27, 2004
Issued Date -
N/A
app pub date -
Oct 1, 2001
filing date -
Oct 3, 2000
priority date (Note) -
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Abstract
Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer on the silicon carbide layer by oxidizing the silicon carbide layer in an N.sub.2 O environment. A predetermined temperature profile and/or a predetermined flow rate profile of N.sub.2 O are provided during the oxidation. The predetermined temperature profile and/or predetermined flow rate profile may be constant or variable and may include ramps to steady state conditions. The predetermined temperature profile and/or the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.
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