Method of reducing aluminum fluoride deposits in plasma etch reactor
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United States of America Patent
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Aug 3, 2004
Grant Date -
Dec 5, 2002
app pub date -
Mar 30, 2001
filing date -
Mar 30, 2001
priority date (Note) -
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Abstract
A method of reducing aluminum fluoride deposits in a plasma etch reactor. The deposits can be reduced during a cleaning step wherein the cleaning gas includes BCl.sub.3 energized into a plasma such that dissociated and undissociated BCl.sub.3 are formed and the undissociated BCl.sub.3 reacts with aluminum fluoride deposits and forms volatile products which are removed from the chamber. The introduction of Cl.sub.2 into the cleaning gas allows control of the degree of BCl.sub.3 dissociation. The deposits can also be reduced during etching of an aluminum layer by controlling the amount of fluorocarbon used in the main etch and adding BCl.sub.3 during the overetch. The cleaning step may be performed without a substrate in the chamber and may be followed by a conditioning step.
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