Methods of forming semiconductor structures, and articles and devices formed thereby
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United States of America Patent
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Aug 3, 2004
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N/A
app pub date -
May 16, 2002
filing date -
Mar 6, 2002
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Abstract
A method of forming a semiconductor structure is described that includes etching a first metal layer at the bottom of a via in a first insulating layer to expose a second metal layer, wherein the first metal layer is on the second metal layer, and wherein the etching of the first metal layer is not reactive-ion etching. Methods of making semiconductor devices and electronic devices are also described.
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