Method for generating extreme ultraviolet radiation based on a radiation-emitting plasma
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 3, 2004
Grant Date -
Aug 7, 2003
app pub date -
Feb 3, 2003
filing date -
Feb 6, 2002
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention is directed to a method for generating extreme ultraviolet (EUV) radiation based on a radiation-emitting plasma, particularly for generating EUV radiation with a wavelength around 13 nm. The object of the invention, to find a novel possibility for generating extreme ultraviolet radiation based on a radiation-emitting plasma in which the emission output of the EUV source is increased to the wavelength range above the L-absorption edge of silicon without substantially increasing the technical and monetary expenditure for plasma generation, is met in a method for generating extreme ultraviolet radiation through emission of broadband radiation from a plasma under vacuum conditions in that the plasma is generated using at least one element from V to VII in the p-block of the fifth period of the periodic table of elements. Iodine, tellurium, antimony or materials containing these elements or chemical compounds formed with these elements are preferably used. The invention is advantageously applied in EUV lithography for semiconductor chip fabrication.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully