Thin film transistors, and liquid crystal display device and electronic apparatus using the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 3, 2004
Grant Date -
Nov 8, 2001
app pub date -
May 26, 1998
filing date -
Oct 9, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
In a TFT including on the surface side of a substrate a channel region opposed to a gate electrode, with a gate insulating film provided therebetween, and a source-drain region connected to the channel region, and a TFT including a source-drain wiring layer electrically connected to the source-drain region, and a gate wiring layer electrically connected to the gate electrode, at least one component part composed of a conductive film or a semiconductor film, among the component parts of each TFT, is provided with a heat-radiating extension extended from the component part itself for enhancing the heat-radiating efficiency from the component part.
First Claim
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International Classification(s)
Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
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| * H1435 SOI CMOS device having body extension for providing sidewall channel stop and bodytie | 44 | 1991 | |
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| * 5821575 Compact self-aligned body contact silicon-on-insulator transistor | 41 | 1996 | |
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| * 5130770 Integrated circuit in silicon on insulator technology comprising a field effect transistor | 53 | 1991 | |
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| * 5616935 Semiconductor integrated circuit having N-channel and P-channel transistors | 77 | 1995 | |
| * 5959313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component | 50 | 1997 | |
| * 6144041 Semiconductor device having an active layer with no grain boundary | 16 | 1998 | |
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| * 6064090 Semiconductor device having a portion of gate electrode formed on an insulating substrate | 28 | 1996 | |
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| * 5920085 Multiple floating gate field effect transistors and methods of operating same | 5 | 1998 | |
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| * 5095348 Semiconductor on insulator transistor | 52 | 1990 | |
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| * 4996574 MIS transistor structure for increasing conductance between source and drain regions | 192 | 1989 | |
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| * 5115289 Semiconductor device and semiconductor memory device | 55 | 1991 | |
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| * 5623155 MOSFET on SOI substrate | 11 | 1995 | |
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