US Patent No: 6,770,936
Number of patents in Portfolio can not be more than 2000
Thin film transistors, and liquid crystal display device and electronic apparatus using the same
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Aug 3, 2004
Issued date -
May 26, 1998
filing date -
09/077,207
serial no -
In Force
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Importance
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Abstract
In a TFT including on the surface side of a substrate a channel region opposed to a gate electrode, with a gate insulating film provided therebetween, and a source-drain region connected to the channel region, and a TFT including a source-drain wiring layer electrically connected to the source-drain region, and a gate wiring layer electrically connected to the gate electrode, at least one component part composed of a conductive film or a semiconductor film, among the component parts of each TFT, is provided with a heat-radiating extension extended from the component part itself for enhancing the heat-radiating efficiency from the component part.
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First Claim
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International Classification(s)
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Cited Art Landscape
| Patent Info | (Count) | # Cites | Year |
|---|---|---|---|
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| 5,616,935 Semiconductor integrated circuit having N-channel and P-channel transistors | 71 | 1995 | |
| 5,959,313 Thin film semiconductor having a monocrystalline region containing carbon, nitrogen and oxygen and crystallization promotor metal component | 42 | 1997 | |
| 6,144,041 Semiconductor device having an active layer with no grain boundary | 15 | 1998 | |
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| 5,130,770 Integrated circuit in silicon on insulator technology comprising a field effect transistor | 52 | 1991 | |
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| 4,996,574 MIS transistor structure for increasing conductance between source and drain regions | 171 | 1989 | |
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| 5,821,575 Compact self-aligned body contact silicon-on-insulator transistor | 35 | 1996 | |
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| 5,115,289 Semiconductor device and semiconductor memory device | 51 | 1991 | |
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| 5,623,155 MOSFET on SOI substrate | 11 | 1995 | |
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| 6,064,090 Semiconductor device having a portion of gate electrode formed on an insulating substrate | 28 | 1996 | |
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| 5,920,085 Multiple floating gate field effect transistors and methods of operating same | 5 | 1998 | |
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| 5,095,348 Semiconductor on insulator transistor | 36 | 1990 | |
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| H1435 SOI CMOS device having body extension for providing sidewall channel stop and bodytie | 39 | 1991 | |
Patent Citation Ranking
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Feb 3, 2016 |
| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |