Importance

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Abstract

In a semiconductor memory device in which a system clock that is supplied from the outside and a data strobe signal that is received as input and supplied as output in synchronization with data are used to control operations for reading and writing data, the transmission of write data from FIFO memories to write amplifiers is controlled by the data strobe signal. In addition, switches for connecting write amplifiers with bit lines that are linked to memory cells that correspond to addresses to which write data are to be written are driven without delaying with respect to a timing signal that is synchronized with the system clock. Write data that have been received as burst input are transmitted in parallel from the FIFO memories to the write amplifiers in units of the prefetch number.

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First Claim