Method of writing to a memory array using clear enable and column clear signals
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United States of America Patent
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Aug 3, 2004
Grant Date -
Oct 31, 2002
app pub date -
Apr 30, 2001
filing date -
Apr 30, 2001
priority date (Note) -
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status (Latency Note)
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Abstract
A method of operating a static random access memory (SRAM) having a column clear function by performing write operations using a two step process. To perform a write, each cell in a row to be written is preset during a first step. Then, each cell that is to have a zero written to it is cleared using a column clear operation. A column of cells may be cleared by enabling all the rows for clearing, then asserting column clear control signals for each of the columns in the array to be cleared. A subset of columns of a plurality of rows may be cleared by asserting a plurality of column clear signals corresponding to the subset of columns and a plurality of work lines corresponding to the plurality of rows.
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