Device parameter and gate performance simulation based on wafer image prediction

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United States of America Patent

PATENT NO 6775818
APP PUB NO 20040040000A1
SERIAL NO

10223931

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Abstract

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A circuit, gate, or device parameter simulation includes data on the initial conditions of manufacture, including illumination conditions on a stepper, material parameters for processing conditions, and chip layout. Optical effects and processing tolerances may be accounted for in the simulation of the final device performance characteristics. The circuit, gate, or device parameter simulation may incorporate optical proximity code software. Simulated active and passive components are generated by the circuit, gate, or device parameter simulation from the simulated patterned layers on the substrate. Feedback may be provided to the circuit, gate, or device parameter simulation to optimize performance.

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Patent Owner(s)

Patent OwnerAddress
BELL SEMICONDUCTOR LLC401 N MICHIGAN AVE SUITE 1600 CHICAGO IL 60611

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Callan, Neal Lake Oswego, OR 12 142
Strelkova, Nadya Portland, OR 4 86
Taravade, Kunal Portland, OR 7 124

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