Semiconductor device and fabrication method thereof
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United States of America Patent
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Aug 17, 2004
Issued Date -
N/A
app pub date -
Jul 5, 2000
filing date -
Jul 6, 1999
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, in an inter-layer insulation film disposed on the insolation film in close contact therewith. These process steps use 6 to 8 photo-masks.
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