Importance

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Abstract

Concave and convex are formed on the substrate 1, the amorphous silicon layer 4 is formed on the metallic catalyst 3 dispersed and arranged in a dotted shape in the concave portion of the concave and convex, the crystal phases 5 having respective orientations from the metallic catalyst 3 are grown, further the crystal phases 5 are integrated with each other by continuing heat treatment and the polycrystalline silicon layer 6 is formed. A crystalline silicon semiconductor device and its method for fabrication which are costly advantageous and capable of efficiently forming the polycrystalline silicon layer of a predetermined thickness needed as a semiconductor device are provided. Moreover, on the substrate 1, the polycrystalline silicon layer 30 oriented on the face (111), the metallic catalyst 40 consisted of Ni, the polycrystalline silicon layer 50 are formed in turn, further, after on which the amorphous silicon layer 60 of the predetermined thickness is formed, Ni element is diffused within the amorphous silicon layer 60 from the metallic catalyst layer 40 by performing heat treatment, and thereby crystallizing the amorphous silicon layer 60 into the polycrystalline silicon layer 60'.

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First Claim