Integrated circuit trenched features and method of producing same
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United States of America Patent
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Aug 24, 2004
Grant Date -
Jul 25, 2002
app pub date -
Mar 19, 2002
filing date -
Aug 14, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A metal processing method is provided for growing a polycrystalline film by preferably chemical vapor deposition (CVD) from a suitable precursor gas or gases on a substrate which has been coated with seeds, preferably of nanocrystal size, of the metal material. The nanocrystal seeds serve as a template for the structure of the final polycrystalline film. The density of the seeds and the thickness of the grown polycrystalline film determine the grain size of the polycrystalline film at the surface of said film. CVD onto the seeds to produce the polycrystalline film avoids the recrystallization step generally necessary for the formation of a polycrystalline film, and thus allows for the growth of polycrystalline films at reduced temperatures.
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