Organic polymer for anti-reflective coating layer and preparation thereof
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United States of America Patent
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Aug 24, 2004
Grant Date -
Jun 26, 2003
app pub date -
Nov 12, 2002
filing date -
Dec 30, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a polymer that can be used as an anti-reflective coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm) or ArF (193 nm) lasers as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.
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