Low dielectric constant shallow trench isolation
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United States of America Patent
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Aug 24, 2004
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N/A
app pub date -
Jun 27, 2002
filing date -
Feb 14, 2000
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Abstract
Techniques of shallow trench isolation and devices produced therefrom. The techniques of shallow trench isolation utilize foamed polymers, cured aerogels or air gaps as the insulation medium. Such techniques facilitate lower dielectric constants than the standard silicon dioxide due to the cells of gaseous components inherent in foamed polymers, cured aerogels or air gaps. Lower dielectric constants reduce capacitive coupling concerns and thus permit higher device density in an integrated circuit device.
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