Polishing pad with optimized grooves and method of forming same
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United States of America Patent
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Aug 31, 2004
Grant Date -
N/A
app pub date -
Apr 29, 2003
filing date -
Apr 29, 2003
priority date (Note) -
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Abstract
A polishing pad useful for chemical mechanical planarization has a polishing layer for planarizing substrates. The polishing layer comprises a radius that extends from a center of the polishing layer to an outer perimeter of the polishing layer; one or more continuous grooves formed in the polishing layer and extending inward from the outer perimeter of the polishing layer; and a circumference fraction grooved (CF). The CF occurs in the area extending from the outer perimeter of the polishing layer a majority distance to the center of the polishing layer; and CF is that portion of circumference at a given radius lying across the one or more continuous grooves divided by full circumference at the given radius. The CF remains within 25% of its average value as a function of the polishing layer radius.
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