Integrated circuit device comprising an inductor with high quality coefficient
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 31, 2004
Grant Date -
N/A
app pub date -
Apr 20, 2000
filing date -
Apr 20, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The integrated circuit comprises an inductor made at a metallization level of the circuit and a buried layer situated in the substrate of the integrated circuit under the said inductor, and connection means linking the inductor to the buried layer. The connection means are configured in such a way as to ensure the same potential in terms of dynamic response between the inductor and the buried layer. This equipotential is ensured by a transistor in a follower type arrangement made in the substrate and connected in parallel with the stray capacitances under the inductor.
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