Memory cell error recovery

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United States of America Patent

PATENT NO 6785169
SERIAL NO

10117596

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The soft error rate in a semiconductor memory is improved via the use of a circuit and arrangement adapted to use a mirror bit to recover from a soft error. According to an example embodiment of the present invention, a semiconductor device includes first and mirror memory cells configured and arranged to receive and store a same bit in response to a write operation, with the memory cells more susceptible to a bit error in which the stored bit changes from a first state to a second state than to a change from the second state into the first state. The memory cells are separated by a distance that is sufficient to make the likelihood of both memory cells being upset by a same source very low. For a read operation, the bits stored at the fist and second memory cells are compared. If the bits are the same, the bit from the first and/or mirror bit is read out, and if the bits are different, a bit corresponding to the more susceptible state is read out. In this manner, soft errors can be overcome.

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Patent Owner(s)

Patent OwnerAddress
T-RAM (ASSIGNMENT FOR THE BENEFIT OF CREDITORS) LLC1100 LA AVENIDA STREET BLDG A SHERWOOD PARTNERS LLC MOUNTAIN VIEW CA 94043

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Igehy, Robert Homan Los Altos, CA 7 378
Kasnavi, Mahmood Reza Palo Alto, CA 1 53
Nemati, Farid Menlo Park, CA 79 2748

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