Memory cell error recovery
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United States of America Patent
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Aug 31, 2004
Grant Date -
N/A
app pub date -
Apr 5, 2002
filing date -
Apr 5, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The soft error rate in a semiconductor memory is improved via the use of a circuit and arrangement adapted to use a mirror bit to recover from a soft error. According to an example embodiment of the present invention, a semiconductor device includes first and mirror memory cells configured and arranged to receive and store a same bit in response to a write operation, with the memory cells more susceptible to a bit error in which the stored bit changes from a first state to a second state than to a change from the second state into the first state. The memory cells are separated by a distance that is sufficient to make the likelihood of both memory cells being upset by a same source very low. For a read operation, the bits stored at the fist and second memory cells are compared. If the bits are the same, the bit from the first and/or mirror bit is read out, and if the bits are different, a bit corresponding to the more susceptible state is read out. In this manner, soft errors can be overcome.
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Patent Owner(s)
| Patent Owner | Address | |
|---|---|---|
| T-RAM (ASSIGNMENT FOR THE BENEFIT OF CREDITORS) LLC | 1100 LA AVENIDA STREET BLDG A SHERWOOD PARTNERS LLC MOUNTAIN VIEW CA 94043 |
International Classification(s)
Inventor(s)
| Inventor Name | Address | # of filed Patents | Total Citations |
|---|---|---|---|
| Igehy, Robert Homan | Los Altos, CA | 7 | 378 |
| Kasnavi, Mahmood Reza | Palo Alto, CA | 1 | 53 |
| Nemati, Farid | Menlo Park, CA | 79 | 2748 |
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| Fee | Large entity fee | small entity fee | micro entity fee |
|---|---|---|---|
| Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
| Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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