Two-stage etching process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 7, 2004
Issued Date -
N/A
app pub date -
Feb 3, 2003
filing date -
Mar 27, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for etching a substrate and removing etch residue deposited on the surfaces in the etching chamber has two stages. In the first stage, an energized first process gas is provided in the chamber, and in the second stage, an energized second process gas is provided in the chamber. The energized first process gas comprises SF.sub.6 and Ar, the volumetric flow ratio of SF.sub.6 to other components of the first process gas being from about 5:1 to about 1:10. The energized second process gas comprises CF.sub.4 and Ar, the volumetric flow ratio of CF.sub.4 to other components of the second process gas being from about 1:0 to about 1:10.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully