Capacitor for semiconductor memory device and method of manufacturing the same
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United States of America Patent
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Sep 7, 2004
Grant Date -
Jul 17, 2003
app pub date -
Jan 2, 2003
filing date -
Jun 25, 1999
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a capacitor for semiconductor device with a dielectric layer having low leakage current and high dielectric constant. The capacitor includes: a lower electrode; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer, wherein the dielectric layer is a TiON layer.
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