US Patent No: 6,791,102

Number of patents in Portfolio can not be more than 2000

Phase change memory

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ALSO PUBLISHED AS: 20040113232
ATTORNEY / AGENT: (SPONSORED)
 

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Abstract

Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include a phase change material having a bottom portion, a lateral portion, and a top portion. The phase change memory may further include a first electrode material contacting the bottom portion and the lateral portion of the phase change material and a second electrode material contacting the top portion of the phase change material.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTEL CORPORATIONSANTA CLARA, CA24136

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dennison, Charles H San Jose, CA 272 6927
Johnson, Brian G San Jose, CA 14 358

Cited Art

Patent Info (Count) # Cites Year
 
OVONYX, INC. (1)
5,534,711 Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom 247 1995

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
MACRONIX INTERNATIONAL CO., LTD. (180)
7,385,235 Spacer chalcogenide memory device 80 2004
7,220,983 Self-aligned small contact phase-change memory method and device 155 2004
7,514,288 Manufacturing methods for thin film fuse phase change ram 2 2005
7,321,130 Thin film fuse phase change RAM and manufacturing method 94 2005
7,238,994 Thin film plate phase change ram circuit and manufacturing method 86 2005
7,608,503 Side wall active pin memory and manufacturing method 7 2005
7,507,986 Thermal isolation for an active-sidewall phase change memory cell 41 2006
7,432,206 Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram 2 2006
7,394,088 Thermally contained/insulated phase change memory device and method (combined) 95 2006
7,956,358 I-shaped phase change memory cell with thermal isolation 1 2006
7,635,855 I-shaped phase change memory cell 9 2006
7,825,396 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2006
7,471,555 Thermally insulated phase change memory device 4 2006
7,599,217 Memory cell device and manufacturing method 3 2006
8,062,833 Chalcogenide layer etching method 0 2006
7,910,907 Manufacturing method for pipe-shaped electrode phase change memory 1 2006
7,397,060 Pipe shaped phase change memory 81 2006
7,683,360 Horizontal chalcogenide element defined by a pad for use in solid-state memories 11 2006
7,554,144 Memory device and manufacturing method 5 2006
7,928,421 Phase change memory cell with vacuum spacer 1 2006
7,829,876 Vacuum cell thermal isolation for a phase change memory device 4 2006
7,479,649 Vacuum jacketed electrode for phase change memory element 54 2006
7,449,710 Vacuum jacket for phase change memory element 77 2006
7,521,364 Surface topology improvement method for plug surface areas 0 2006
7,456,421 Vertical side wall active pin structures in a phase change memory and manufacturing methods 4 2006
8,129,706 Structures and methods of a bistable resistive random access memory 0 2006
7,608,848 Bridge resistance random access memory device with a singular contact structure 29 2006
7,605,079 Manufacturing method for phase change RAM with electrode layer process 2 2006
7,514,367 Method for manufacturing a narrow structure on an integrated circuit 0 2006
7,423,300 Single-mask phase change memory element 81 2006
7,820,997 Resistor random access memory cell with reduced active area and reduced contact areas 0 2006
7,732,800 Resistor random access memory cell with L-shaped electrode 0 2006
7,459,717 Phase change memory cell and manufacturing method 9 2006
7,414,258 Spacer electrode small pin phase change memory RAM and manufacturing method 2 2006
8,237,140 Self-aligned, embedded phase change RAM 0 2006
7,642,539 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2006
7,560,337 Programmable resistive RAM and manufacturing method 19 2006
7,696,506 Memory cell with memory material insulation and manufacturing method 1 2006
7,785,920 Method for making a pillar-type phase change memory element 1 2006
7,741,636 Programmable resistive RAM and manufacturing method 1 2006
7,450,411 Phase change memory device and manufacturing method 2 2006
7,595,218 Programmable resistive RAM and manufacturing method 2 2006
7,531,825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 2 2006
7,442,603 Self-aligned structure and method for confining a melting point in a resistor random access memory 5 2006
7,598,512 Thin film fuse phase change cell with thermal isolation layer and manufacturing method 2 2006
7,772,581 Memory device having wide area phase change element and small electrode contact area 8 2006
7,504,653 Memory cell device with circumferentially-extending memory element 15 2006
7,510,929 Method for making memory cell device 1 2006
7,863,655 Phase change memory cells with dual access devices 1 2006
7,527,985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas 1 2006
7,388,771 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 4 2006
8,067,762 Resistance random access memory structure for enhanced retention 0 2006
7,816,661 Air cell thermal isolation for a memory array formed of a programmable resistive material 0 2006
7,682,868 Method for making a keyhole opening during the manufacture of a memory cell 0 2006
7,476,587 Method for making a self-converged memory material element for memory cell 13 2006
7,697,316 Multi-level cell resistance random access memory with metal oxides 24 2006
7,903,447 Method, apparatus and computer program product for read before programming process on programmable resistive memory cell 0 2006
8,344,347 Multi-layer electrode structure 0 2006
7,688,619 Phase change memory cell and manufacturing method 33 2006
7,718,989 Resistor random access memory cell device 2 2006
7,786,460 Phase change memory device and manufacturing method 23 2007
7,440,315 Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell 7 2007
7,433,226 Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell 7 2007
7,483,292 Memory cell with separate read and program paths 2 2007
8,008,643 Phase change memory cell with heater and method for fabricating the same 0 2007
7,619,237 Programmable resistive memory cell with self-forming gap 2 2007
7,534,647 Damascene phase change RAM and manufacturing method 1 2007
7,956,344 Memory cell with memory element contacting ring-shaped upper end of bottom electrode 0 2007
7,786,461 Memory structure with reduced-size memory element between memory material portions 4 2007
7,755,076 self align side wall active phase change memory 7 2007
7,569,844 Memory cell sidewall contacting side electrode 21 2007
7,514,334 Thin film plate phase change RAM circuit and manufacturing method 43 2007
7,463,512 Memory element with reduced-current phase change element 5 2007
7,701,759 Memory cell device and programming methods 8 2007
7,483,316 Method and apparatus for refreshing programmable resistive memory 1 2007
7,884,342 Phase change memory bridge cell 0 2007
7,729,161 Phase change memory with dual word lines and source lines and method of operating same 3 2007
7,696,503 Multi-level memory cell having phase change element and asymmetrical thermal boundary 10 2007
8,178,386 Phase change memory cell array with self-converged bottom electrode and method for manufacturing 0 2007
7,642,125 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 3 2007
7,663,135 Memory cell having a side electrode contact 4 2007
7,551,473 Programmable resistive memory with diode structure 12 2007
7,535,756 Method to tighten set distribution for PCRAM 8 2007
7,919,766 Method for making self aligning pillar memory cell device 1 2007
7,804,083 Phase change memory cell including a thermal protect bottom electrode and manufacturing methods 0 2007
7,646,631 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 1 2007
7,579,613 Thin film fuse phase change RAM and manufacturing method 9 2007
7,639,527 Phase change memory dynamic resistance test and manufacturing methods 1 2008
7,884,343 Phase change memory cell with filled sidewall memory element and method for fabricating the same 3 2008
7,879,643 Memory cell with memory element contacting an inverted T-shaped bottom electrode 2 2008
7,879,645 Fill-in etching free pore device 7 2008
7,619,311 Memory cell device with coplanar electrode surface and method 9 2008
8,158,965 Heating center PCRAM structure and methods for making 0 2008
7,935,564 Self-converging bottom electrode ring 3 2008
7,932,101 Thermally contained/insulated phase change memory device and method 1 2008
8,084,842 Thermally stabilized electrode structure 1 2008
7,791,057 Memory cell having a buried phase change region and method for fabricating the same 4 2008
7,701,750 Phase change device having two or more substantial amorphous regions in high resistance state 7 2008
7,586,778 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 22 2008
8,415,651 Phase change memory cell having top and bottom sidewall contacts 0 2008
7,642,123 Thermally insulated phase change memory manufacturing method 3 2008
7,867,815 Spacer electrode small pin phase change RAM and manufacturing method 0 2008
7,777,215 Resistive memory structure with buffer layer 7 2008
7,932,506 Fully self-aligned pore-type memory cell having diode access device 1 2008
7,903,457 Multiple phase change materials in an integrated circuit for system on a chip application 3 2008
7,842,536 Vacuum jacket for phase change memory element 1 2008
7,719,913 Sensing circuit for PCRAM applications 1 2008
8,243,494 Self-aligned structure and method for confining a melting point in a resistor random access memory 0 2008
8,324,605 Dielectric mesh isolated phase change structure for phase change memory 0 2008
7,897,954 Dielectric-sandwiched pillar memory device 0 2008
7,932,129 Vertical side wall active pin structures in a phase change memory and manufacturing methods 0 2008
8,036,014 Phase change memory program method without over-reset 3 2008
7,902,538 Phase change memory cell with first and second transition temperature portions 0 2008
7,638,359 Method for making a self-converged void and bottom electrode for memory cell 2 2008
7,749,854 Method for making a self-converged memory material element for memory cell 0 2008
7,687,307 Vacuum jacketed electrode for phase change memory element 0 2008
7,869,270 Set algorithm for phase change memory cell 2 2008
8,089,137 Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method 1 2009
7,923,285 Method for forming self-aligned thermal isolation cell for a variable resistance memory array 1 2009
8,107,283 Method for setting PCRAM devices 2 2009
8,030,635 Polysilicon plug bipolar transistor for phase change memory 2 2009
7,910,906 Memory cell device with circumferentially-extending memory element 0 2009
8,084,760 Ring-shaped electrode and manufacturing method for same 0 2009
8,173,987 Integrated circuit 3D phase change memory array and manufacturing method 0 2009
8,077,505 Bipolar switching of phase change device 0 2009
8,097,871 Low operational current phase change memory structures 0 2009
8,134,857 Methods for high speed reading operation of phase change memory and device employing same 1 2009
7,933,139 One-transistor, one-resistor, one-capacitor phase change memory 3 2009
7,972,893 Memory device manufacturing method 0 2009
8,350,316 Phase change memory cells having vertical channel access transistor and memory plane 0 2009
7,968,876 Phase change memory cell having vertical channel access transistor 1 2009
8,158,963 Programmable resistive RAM and manufacturing method 0 2009
8,406,033 Memory device and method for sensing and fixing margin cells 0 2009
8,064,247 Rewritable memory device based on segregation/re-absorption 0 2009
8,110,822 Thermal protect PCRAM structure and methods for making 1 2009
7,894,254 Refresh circuitry for phase change memory 2 2009
7,924,600 Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states 1 2009
8,198,619 Phase change memory cell structure 0 2009
8,283,650 Flat lower bottom electrode for phase change memory cell 0 2009
8,064,248 2T2R-1T1R mix mode phase change memory array 1 2009
8,110,429 Bridge resistance random access memory device and method with a singular contact structure 0 2009
7,879,692 Programmable resistive memory cell with self-forming gap 0 2009
7,972,895 Memory cell device with coplanar electrode surface and method 1 2009
7,993,962 I-shaped phase change memory cell 0 2009
8,143,612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing 0 2009
8,062,923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method 0 2009
7,893,418 Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods 0 2009
7,964,863 Memory cell having a side electrode contact 0 2009
7,929,340 Phase change memory cell and manufacturing method 0 2010
7,964,468 Multi-level memory cell having phase change element and asymmetrical thermal boundary 0 2010
8,238,149 Methods and apparatus for reducing defect bits in phase change memory 0 2010
8,111,541 Method of a multi-level cell resistance random access memory with metal oxides 0 2010
7,920,415 Memory cell device and programming methods 0 2010
8,059,449 Phase change device having two or more substantial amorphous regions in high resistance state 0 2010
8,363,463 Phase change memory having one or more non-constant doping profiles 0 2010
8,178,387 Methods for reducing recrystallization time for a phase change material 0 2010
8,178,405 Resistor random access memory cell device 0 2010
7,978,509 Phase change memory with dual word lines and source lines and method of operating same 0 2010
8,080,440 Resistor random access memory cell with L-shaped electrode 0 2010
8,178,388 Programmable resistive RAM and manufacturing method 1 2010
8,237,148 self align side wall active phase change memory 0 2010
8,310,864 Self-aligned bit line under word line memory array 0 2010
7,964,437 Memory device having wide area phase change element and small electrode contact area 0 2010
7,943,920 Resistive memory structure with buffer layer 0 2010
8,008,114 Phase change memory device and manufacturing method 0 2010
7,875,493 Memory structure with reduced-size memory element between memory material portions 0 2010
8,039,392 Resistor random access memory cell with reduced active area and reduced contact areas 1 2010
8,395,935 Cross-point self-aligned reduced cell size phase change memory 0 2010
8,143,089 Self-align planerized bottom electrode phase change memory and manufacturing method 0 2010
8,097,487 Method for making a phase change memory device with vacuum cell thermal isolation 1 2010
8,110,430 Vacuum jacket for phase change memory element 0 2010
8,110,456 Method for making a self aligning memory device 0 2010
8,094,488 Set algorithm for phase change memory cell 0 2010
8,263,960 Phase change memory cell with filled sidewall memory element and method for fabricating the same 0 2010
8,315,088 Multiple phase change materials in an integrated circuit for system on a chip application 0 2011
8,228,721 Refresh circuitry for phase change memory 0 2011
8,222,071 Method for making self aligning pillar memory cell device 0 2011
8,313,979 Phase change memory cell having vertical channel access transistor 0 2011
8,324,681 Stacked non-volatile memory device and methods for fabricating the same 0 2011
8,237,144 Polysilicon plug bipolar transistor for phase change memory 0 2011
 
SAMSUNG ELECTRONICS CO., LTD. (9)
7,384,825 Methods of fabricating phase change memory elements having a confined portion of phase change material on a recessed contact 8 2005
7,692,176 Phase-changeable memory devices including an adiabatic layer 1 2005
7,704,787 Methods for fabricating phase changeable memory devices 7 2006
7,425,735 Multi-layer phase-changeable memory devices 8 2007
7,867,880 Metal precursors for low temperature deposition and methods of forming a metal thin layer and manufacturing a phase-change memory device using the metal precursors 0 2007
7,462,900 Phase changeable memory devices including nitrogen and/or silicon 7 2008
7,804,084 Phase change memory elements having a confined portion of phase change material on a recessed contact 0 2008
7,615,401 Methods of fabricating multi-layer phase-changeable memory devices 8 2008
7,943,918 Multi-layer phase-changeable memory devices 1 2009
 
QIMONDA AG (7)
7,361,925 Integrated circuit having a memory including a low-k dielectric material for thermal isolation 0 2005
7,515,461 Current compliant sensing architecture for multilevel phase change memory 48 2007
8,138,028 Method for manufacturing a phase change memory device with pillar bottom electrode 0 2007
8,189,372 Integrated circuit including electrode having recessed portion 2 2008
7,824,951 Method of fabricating an integrated circuit having a memory including a low-k dielectric material 0 2008
8,030,634 Memory array with diode driver and method for fabricating the same 1 2008
7,825,398 Memory cell having improved mechanical stability 0 2008
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (6)
7,456,420 Electrode for phase change memory device and method 4 2006
7,923,712 Phase change memory element with a peripheral connection to a thin film electrode 0 2009
8,283,202 Single mask adder phase change memory element 0 2009
8,233,317 Phase change memory device suitable for high temperature operation 0 2009
8,395,192 Single mask adder phase change memory element 0 2011
8,415,653 Single mask adder phase change memory element 0 2012
 
MICRON TECHNOLOGY, INC. (4)
7,135,696 Phase change memory with damascene memory element 24 2004
7,745,231 Resistive memory cell fabrication methods and devices 0 2007
8,193,521 Resistive memory cell fabrication methods and devices 0 2010
8,330,139 Multi-level memory cell 0 2011
 
INTEL CORPORATION (3)
7,498,655 Probe-based memory 0 2006
8,076,664 Phase change memory with layered insulator 0 2007
7,750,433 Probe-based memory 0 2009
 
OVONYX, INC. (3)
7,049,623 Vertical elevated pore phase change memory 18 2002
7,211,819 Damascene phase change memory 2 2003
7,364,937 Vertical elevated pore phase change memory 2 2005
 
HYNIX SEMICONDUCTOR INC. (1)
7,262,502 Phase-change random access memory device and method for manufacturing the same 21 2004
 
NOVELLUS SYSTEMS, INC. (1)
8,062,977 Ternary tungsten-containing resistive thin films 4 2009
 
SILICON STORAGE TECHNOLOGY, INC. (1)
6,937,507 Memory device and method of operating same 207 2003
 
STMICROELECTRONICS S.R.L. (1)
6,946,673 Integrated resistor, phase-change memory element including this resistor, and process for the fabrication thereof 3 2003

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