LVDS driver in bipolar and MOS technology
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United States of America Patent
Stats
-
Sep 14, 2004
Grant Date -
Dec 11, 2003
app pub date -
May 12, 2003
filing date -
Jun 7, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A circuit arrangement for an LVDS driver, which uses combined bipolar and MOSFET technology with at least two MOSFETs, is shown, wherein a multiplier circuit is connected to an output stage of the LVDS driver and the multiplier circuit is controlled by means of an automatic control circuit, which generates control signals for controlling a current source of the multiplier circuit and for controlling the amplification factor of differential input signals of the multiplier circuit. Advantages of the invention are that it enables said technology, in which semi-conductor components are used in bipolar techniques (e.g. NPN and/or PNP transistors) (as well as MOS technology), to take advantage of the high speed of the bipolar elements compared with MOS elements.
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