Sputtering method for filling holes with copper
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United States of America Patent
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Sep 21, 2004
Grant Date -
Aug 21, 2003
app pub date -
Feb 20, 2003
filing date -
May 13, 1997
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Abstract
A method of filling trenches or vias on a semiconductor workpiece surface with copper using sputtering techniques. A copper wetting layer and a copper fill layer may both be applied by sputtering techniques. The thin wetting layer of copper is applied at a substrate surface temperature ranging between about 20.degree. C. to about 250.degree. C., and subsequently the temperature of the substrate is increased, with the application of the sputtered copper fill layer beginning at above at least about 200.degree. C. and continuing while the substrate temperature is increased to a temperature as high as about 600.degree. C. Preferably the substrate temperature during application of the sputtered fill layer ranges between about 300.degree. C. and about 500.degree. C.
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