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Abstract

Silicon-chromium cathode targets having 5 to 80 weight percent chromium are used to sputter absorbing coatings of silicon-chromium-containing material in atmospheres of inert gas such as argon, reactive gases such as nitrogen, oxygen, and mixtures thereof to form metallic films and films of nitrides, oxides, and oxynitrides of metals. Chromium in the cathode target in the range of 5 to 80 weight percent provides target stability and enhanced sputtering rates over targets of silicon alone and are comparable to the target stability and sputtering rates of silicon-nickel targets, Chromium in the target may be replaced in part with nickel, preferably in the range of 5 to 15 weight percent, to produce coatings of silicon-chromium-nickel and the oxides, nitrides and oxynitrides thereof.

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First Claim