Method and apparatus for treating low k dielectric layers to reduce diffusion
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United States of America Patent
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Sep 21, 2004
Grant Date -
Feb 7, 2002
app pub date -
Jul 10, 2001
filing date -
Jul 14, 2000
priority date (Note) -
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Abstract
Methods and apparatus for depositing low dielectric constant layers that are resistant to oxygen diffusion and have low oxygen contents are provided. The layers may be formed by exposing a low dielectric constant layer to a plasma of an inert gas to densify the low dielectric constant layer, by exposing the low dielectric constant layer to a nitrating plasma to form a passivating nitride surface on the layer, or by depositing a thin passivating layer on the low dielectric constant layer to reduce oxygen diffusion therein. The low dielectric constant layer may be deposited and treated in situ.
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