Diffusion barrier and method therefor
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United States of America Patent
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Sep 21, 2004
Grant Date -
Jul 1, 2004
app pub date -
Dec 27, 2002
filing date -
Dec 27, 2002
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device containing at least one transistor and at least one heater resistor in a heater resistor area adjacent the at least one transistor on a semiconductor substrate. The device includes a silicon substrate containing contact openings for metal contacts to the at least one transistor. A barrier layer is in the contact openings and in the heater resistor area and provides a diffusion barrier/heater resistor layer. The barrier layer is selected from a group consisting of TaN, Ta/TaAl, TaN/TaAl, TiWN, TaAlN, TiN, Ta(N.sub.x, O.sub.y), WSi(N.sub.x, O.sub.y), TaSi, TaSiN, WSiN, and TaSi(N.sub.x, O.sub.y). A conductive layer is adjacent at least a portion of the barrier layer for providing connection between a power source and the at least one heater resistor and at least one transistor. The semiconductor device is devoid of a patterned and etched barrier layer in the heater resistor area.
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