157 nm laser system and method for multi-layer semiconductor failure analysis
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United States of America Patent
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Sep 21, 2004
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N/A
app pub date -
Dec 8, 2000
filing date -
Dec 20, 1999
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Abstract
A failure analysis system and method for multi-layer semiconductor devices, including a molecular fluorine laser system for producing a 157 nm beam and an imaging system for imaging the beam onto the semiconductor device. The laser beam etches away one or more top (passivation) layers to expose layers disposed underneath. Circuitry formed in exposed layers can then be tested.
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