Self-cleaning process for etching silicon-containing material
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United States of America Patent
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Sep 28, 2004
Issued Date -
N/A
app pub date -
Feb 18, 2000
filing date -
Nov 12, 1997
priority date (Note) -
Expired
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Abstract
A method of etching a silicon-containing material in a substrate comprises placing the substrate in a process chamber and exposing the substrate to an energized gas comprising fluorine-containing gas, chlorine-containing gas and sidewall-passivation gas. The silicon-containing material on the substrate comprises regions having different compositions, and the volumetric flow ratio of the fluorine-containing gas, chlorine-containing gas, and sidewall-passivation gas is selected to etch the compositionally different regions at substantially similar etch rates.
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