Method for depositing refractory metal layers employing sequential deposition techniques
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United States of America Patent
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Sep 28, 2004
Grant Date -
Jun 5, 2003
app pub date -
Oct 10, 2002
filing date -
Oct 10, 2001
priority date (Note) -
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Abstract
A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing chamber by alternately pulsing a tungsten-containing compound and a reducing gas selected from a group consisting of silane (SiH.sub.4), disilane (Si.sub.2 H.sub.6), dichlorosilane (SiCl.sub.2 H.sub.2), derivatives thereof, and combinations thereof. A tungsten bulk fill may then be deposited on the nucleation layer using cyclical deposition, chemical vapor deposition, or physical vapor deposition techniques.
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