Method for forming a polycide structure in a semiconductor device
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United States of America Patent
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Sep 28, 2004
Grant Date -
Dec 26, 2002
app pub date -
Mar 20, 2002
filing date -
Mar 21, 2001
priority date (Note) -
Expired
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Abstract
A method for preventing void formation in a polycide structure includes sequentially depositing a gate oxide film, a polysilicon film doped with impurities, a seed film having a sufficient amount of silicon for reacting with an overlaying tungsten layer, a tungsten silicide precursor layer; and an etch mask made of an insulating material on a semiconductor substrate; performing a patterned etching using the etch mask; and heat-treating the resulting structure in an oxygen atmosphere at an elevated temperature and pressure to form a polycide structure wherein void formation is prevented. Since the seed film has a sufficient amount of amorphous silicon for reacting to the tungsten, migration of silicon atoms to the interfacial surface between the polysilicon film and the tungsten silicide precursor layer is prevented, thereby preventing the formation of voids in the polysilicon film.
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