Scanning atom probe

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United States of America Patent

PATENT NO 6797952
APP PUB NO 20030066962A1
SERIAL NO

10205919

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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According to the invention, in selecting an analyzed area of a scanning atom probe (SAP), there is adopted a method of using a tip of the lead-out electrode of SAP as a scanning probe of a scanning tunneling microscope (STM) and drawing a surface shape of a sample to thereby select the analyzed area and with regard to the tip of the lead-out electrode of SAP, there is formed an exclusive probe in a needle-like shape by a CVD micromaching technology or a lithographic method using focused ion beam in order to promote accuracy of the scanning probe of STM. Further, a conical dome of a conductive material is formed at the tip of the conical electrode mechanically formed by using a CVD fabricating method using focused ion beam and the tip is shaped by sputter etching to thereby form the lead-out electrode near to an ideal shape.

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Patent Owner(s)

  • HITACHI HIGH-TECH SCIENCE CORPORATION;KANAZAWA INSTITUTE OF TECHNOLOGY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kaito, Takashi Chiba, JP 28 339
Nishikawa, Osamu Ishikawa, JP 24 267
Yagyu, Takaya Ishikawa, JP 4 16

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