Metal structure for a phase-change memory device
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United States of America Patent
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Sep 28, 2004
Grant Date -
Oct 16, 2003
app pub date -
Apr 17, 2003
filing date -
Dec 21, 2000
priority date (Note) -
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Abstract
The invention relate to a damascene chalcogenide memory cell structure. The damascene chalcogenide memory cell structure is fabricated under conditions that simplify previous process flows. The damascene chalcogenide memory cell structure also prevents volatilization of the chalcogenide memory material.
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